Interfacial atomic structure analysis at sub-angstrom resolution using aberration-corrected STEM
نویسندگان
چکیده
منابع مشابه
Interfacial atomic structure analysis at sub-angstrom resolution using aberration-corrected STEM
The atomic structure of a SiGe/Si epitaxial interface grown via molecular beam epitaxy on a single crystal silicon substrate was investigated using an aberration-corrected scanning transmittance electron microscope equipped with a high-angle annular dark-field detector and an energy-dispersive spectrometer. The accuracy required for compensation of the various residual aberration coefficients t...
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2014
ISSN: 1556-276X
DOI: 10.1186/1556-276x-9-578